IRLMS2002TRPBF Infineon Technologies
auf Bestellung 36000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.15 EUR |
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Technische Details IRLMS2002TRPBF Infineon Technologies
Description: MOSFET N-CH 20V 6.5A MICRO6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: Micro6™(SOT23-6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 15 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15.
Weitere Produktangebote IRLMS2002TRPBF nach Preis ab 0.15 EUR bis 0.83 EUR
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IRLMS2002TRPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH Si 20V 6.5A 6-Pin TSOP T/R |
auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLMS2002TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 20V 6.5A 6-Pin TSOP T/R |
auf Bestellung 63000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLMS2002TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 20V 6.5A 6-Pin TSOP T/R |
auf Bestellung 63000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLMS2002TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 20V 6.5A 6-Pin TSOP T/R |
auf Bestellung 10332 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLMS2002TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 20V 6.5A MICRO6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: Micro6™(SOT23-6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 |
auf Bestellung 39000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLMS2002TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 20V 6.5A 6-Pin TSOP T/R |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLMS2002TRPBF | Hersteller : Infineon Technologies |
MOSFETs MOSFT 20V 6.5A 30mOhm 15nC Log Lvl |
auf Bestellung 15698 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLMS2002TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 20V 6.5A MICRO6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: Micro6™(SOT23-6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 |
auf Bestellung 39959 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLMS2002TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 20V 6.5A 6-Pin TSOP T/R |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLMS2002TRPBF | Hersteller : INFINEON |
Description: INFINEON - IRLMS2002TRPBF - Leistungs-MOSFET, n-Kanal, 20 V, 6.5 A, 0.03 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 6.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 2W Bauform - Transistor: SOT-23 Anzahl der Pins: 6Pin(s) Produktpalette: HEXFET productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.03ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 9868 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLMS2002TRPBF | Hersteller : INFINEON |
Description: INFINEON - IRLMS2002TRPBF - Leistungs-MOSFET, n-Kanal, 20 V, 6.5 A, 0.03 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 6.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 2W Bauform - Transistor: SOT-23 Anzahl der Pins: 6Pin(s) Produktpalette: HEXFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.03ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 9868 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLMS2002TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 20V 6.5A 6-Pin TSOP T/R |
auf Bestellung 84000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLMS2002TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 2W; TSOP6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.5A Power dissipation: 2W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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IRLMS2002TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 2W; TSOP6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.5A Power dissipation: 2W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |