IRLMS6702TR Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 2.4A 6-TSOP
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Supplier Device Package: Micro6™(SOT23-6)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
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Technische Details IRLMS6702TR Infineon Technologies
Description: MOSFET P-CH 20V 2.4A 6-TSOP, Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Supplier Device Package: Micro6™(SOT23-6), Vgs(th) (Max) @ Id: 700mV @ 250µA (Min), Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: SOT-23-6, Packaging: Cut Tape (CT).