
auf Bestellung 2105 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 3.13 EUR |
10+ | 1.61 EUR |
100+ | 1.43 EUR |
500+ | 1.24 EUR |
1000+ | 1.13 EUR |
9000+ | 1.10 EUR |
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Technische Details IRLR024PBF Vishay Semiconductors
Description: MOSFET N-CH 60V 14A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V.
Weitere Produktangebote IRLR024PBF nach Preis ab 1.05 EUR bis 3.73 EUR
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IRLR024PBF | Hersteller : Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V |
auf Bestellung 8042 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLR024PBF | Hersteller : Vishay |
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auf Bestellung 72 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLR024PBF | Hersteller : Vishay |
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auf Bestellung 72 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLR024PBF | Hersteller : Vishay |
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auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLR024PBF Produktcode: 111316
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IRLR024PBF | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Power dissipation: 42W Case: DPAK; TO252 Mounting: SMD Kind of package: tube Kind of channel: enhancement Gate charge: 18nC On-state resistance: 0.14Ω Gate-source voltage: ±10V Pulsed drain current: 56A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRLR024PBF | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Power dissipation: 42W Case: DPAK; TO252 Mounting: SMD Kind of package: tube Kind of channel: enhancement Gate charge: 18nC On-state resistance: 0.14Ω Gate-source voltage: ±10V Pulsed drain current: 56A |
Produkt ist nicht verfügbar |