auf Bestellung 2105 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.13 EUR |
| 10+ | 1.61 EUR |
| 100+ | 1.43 EUR |
| 500+ | 1.24 EUR |
| 1000+ | 1.13 EUR |
| 9000+ | 1.1 EUR |
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Technische Details IRLR024PBF Vishay Semiconductors
Description: MOSFET N-CH 60V 14A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V.
Weitere Produktangebote IRLR024PBF nach Preis ab 1.09 EUR bis 3.66 EUR
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IRLR024PBF | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 60V 14A DPAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V |
auf Bestellung 4647 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLR024PBF | Hersteller : Vishay |
Trans MOSFET N-CH 60V 14A 3-Pin(2+Tab) DPAK |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLR024PBF Produktcode: 111316
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Transistoren > MOSFET N-CH |
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IRLR024PBF | Hersteller : Vishay |
Trans MOSFET N-CH 60V 14A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
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| IRLR024PBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 56A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 18nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |