Technische Details IRLR024PBF
- MOSFET
- Transistor Polarity:N Channel
- D
Weitere Produktangebote IRLR024PBF nach Preis ab 1.1 EUR bis 3.13 EUR
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IRLR024PBF | Hersteller : Vishay Semiconductors |
 MOSFETs RECOMMENDED ALT IRLR |
auf Bestellung 2105 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLR024PBF | Hersteller : Vishay |
Trans MOSFET N-CH 60V 14A 3-Pin(2+Tab) DPAK |
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| IRLR024PBF | Hersteller : Vishay Siliconix |
MOSFET N-CH 60V 14A DPAK Група товару: Транзистори Од. вим: шт |
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IRLR024PBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 14A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V |
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| IRLR024PBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Power dissipation: 42W Case: DPAK; TO252 Mounting: SMD Kind of package: tube Kind of channel: enhancement Pulsed drain current: 56A On-state resistance: 0.14Ω Gate charge: 18nC Gate-source voltage: ±10V |
Produkt ist nicht verfügbar |