IRLR120TRPBF VISHAY
Hersteller: VISHAYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.9A
Power dissipation: 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 12nC
On-state resistance: 0.27Ω
Gate-source voltage: ±10V
Pulsed drain current: 31A
auf Bestellung 1222 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 65+ | 1.12 EUR |
| 124+ | 0.58 EUR |
| 141+ | 0.51 EUR |
| 162+ | 0.44 EUR |
| 171+ | 0.42 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRLR120TRPBF VISHAY
Description: MOSFET N-CH 100V 7.7A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc), Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V, Power Dissipation (Max): 2.5W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V.
Weitere Produktangebote IRLR120TRPBF nach Preis ab 0.42 EUR bis 2.34 EUR
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IRLR120TRPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.9A Power dissipation: 42W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 12nC On-state resistance: 0.27Ω Gate-source voltage: ±10V Pulsed drain current: 31A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1222 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLR120TRPBF | Hersteller : Vishay Semiconductors |
MOSFETs RECOMMENDED ALT IRLR |
auf Bestellung 961 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLR120TRPBF | Hersteller : Vishay |
Trans MOSFET N-CH 100V 7.7A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRLR120#TRPBF | Hersteller : IR |
auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
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IRLR120TRPBF | Hersteller : Vishay |
Trans MOSFET N-CH 100V 7.7A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IRLR120TRPBF | Hersteller : Vishay |
Trans MOSFET N-CH 100V 7.7A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IRLR120TRPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 7.7A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRLR120TRPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 7.7A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V |
Produkt ist nicht verfügbar |