
IRLR3410TRRPBF Infineon Technologies
auf Bestellung 875 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
267+ | 0.55 EUR |
271+ | 0.53 EUR |
275+ | 0.50 EUR |
280+ | 0.47 EUR |
284+ | 0.45 EUR |
289+ | 0.42 EUR |
500+ | 0.40 EUR |
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Technische Details IRLR3410TRRPBF Infineon Technologies
Description: MOSFET N-CH 100V 17A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V, Power Dissipation (Max): 79W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-252AA (DPAK), Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V.
Weitere Produktangebote IRLR3410TRRPBF nach Preis ab 0.41 EUR bis 0.90 EUR
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IRLR3410TRRPBF | Hersteller : Infineon Technologies |
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auf Bestellung 875 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLR3410TRRPBF | Hersteller : Infineon Technologies |
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auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLR3410TRRPBF | Hersteller : Infineon Technologies |
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IRLR3410TRRPBF | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 52W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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IRLR3410TRRPBF | Hersteller : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRLR3410TRRPBF | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |
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![]() |
IRLR3410TRRPBF | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 52W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |