Technische Details IRLR3717PBF
- MOSFET, N, LOGIC, D-PAK
- Transistor Type:MOSFET
- Max Voltage Vds:20V
- On State Resistance:4mohm
- Transistor Case Style:D-PAK
- Alternate Case Style:D-PAK
- Case Style:DPAK
- Cont Current Id:120A
- Power Dissipation Pd:89W
- Pulse Current Idm:460A
- SMD Marking:IRLR3717
- Termination Type:SMD
- Transistor Polarity:N
- Typ Voltage Vds:20V
- Typ Voltage Vgs th:2V
- Voltage Vgs Rds on Measurement:10V
Weitere Produktangebote IRLR3717PBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| IRLR3717PBF |
  Транзистори |
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IRLR3717PBF | Infineon Technologies |
Description: MOSFET N-CH 20V 120A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 2.45V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 10 V |
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 |
IRLR3717PBF | Infineon Technologies |
MOSFETs 20V 1 N-CH HEXFET 4.2mOhms 21nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRLR3717PBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 120A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 10 V
Description: MOSFET N-CH 20V 120A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRLR3717PBF |
|
Hersteller: Infineon Technologies
MOSFETs 20V 1 N-CH HEXFET 4.2mOhms 21nC
MOSFETs 20V 1 N-CH HEXFET 4.2mOhms 21nC
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Im Einkaufswagen
Stück im Wert von UAH