IRLR6225TRPBF INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 100A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
| Anzahl | Preis |
|---|---|
| 61+ | 1.17 EUR |
| 92+ | 0.79 EUR |
| 108+ | 0.67 EUR |
| 116+ | 0.62 EUR |
| 250+ | 0.55 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRLR6225TRPBF INFINEON TECHNOLOGIES
Description: MOSFET N-CH 20V 100A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 21A, 4.5V, Power Dissipation (Max): 63W (Tc), Vgs(th) (Max) @ Id: 1.1V @ 50µA, Supplier Device Package: TO-252AA (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 10 V.
Weitere Produktangebote IRLR6225TRPBF nach Preis ab 0.6 EUR bis 2.34 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IRLR6225TRPBF | Infineon Technologies |
Trans MOSFET N-CH 20V 100A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1864 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLR6225TRPBF | Infineon Technologies |
Description: MOSFET N-CH 20V 100A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 21A, 4.5V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 1.1V @ 50µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 10 V |
auf Bestellung 24 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLR6225TRPBF | Infineon Technologies |
Trans MOSFET N-CH 20V 100A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IRLR6225TRPBF | Infineon Technologies |
Trans MOSFET N-CH 20V 100A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 19 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IRLR6225TRPBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 20V 100A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 20V 100A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 1864 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 91+ | 1.62 EUR |
| 154+ | 0.94 EUR |
| 169+ | 0.84 EUR |
| 500+ | 0.66 EUR |
| 1000+ | 0.6 EUR |
| IRLR6225TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 100A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 21A, 4.5V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 10 V
Description: MOSFET N-CH 20V 100A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 21A, 4.5V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 10 V
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.34 EUR |
| 12+ | 1.49 EUR |
| IRLR6225TRPBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 20V 100A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 20V 100A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
| IRLR6225TRPBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 20V 100A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 20V 100A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)