Technische Details IRLR8103 IR
Description: MOSFET N-CH 30V 89A D-PAK, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: TO-252AA (DPAK), Vgs(th) (Max) @ Id: 2V @ 250µA (Min), Power Dissipation (Max): 89W (Ta), Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 89A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tube.
Weitere Produktangebote IRLR8103
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IRLR8103 | Infineon Technologies |
 Description: MOSFET N-CH 30V 89A D-PAKGate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-252AA (DPAK) Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Power Dissipation (Max): 89W (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 89A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 75 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IRLR8103 | Infineon Technologies |
Array |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRLR8103 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 89A D-PAK
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Power Dissipation (Max): 89W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 89A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Description: MOSFET N-CH 30V 89A D-PAK
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Power Dissipation (Max): 89W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 89A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 75 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRLR8103 |
|
Hersteller: Infineon Technologies
Array
Array
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH