Technische Details IRLR8103 IR
Description: MOSFET N-CH 30V 89A D-PAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 89A (Ta), Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V, Power Dissipation (Max): 89W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA (Min), Supplier Device Package: D-Pak, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V.
Weitere Produktangebote IRLR8103
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IRLR8103 | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 30V 89A D-PAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 89A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Power Dissipation (Max): 89W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Supplier Device Package: D-Pak Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V |
Produkt ist nicht verfügbar |
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| IRLR8103 | Hersteller : Infineon Technologies |
Infineon |
Produkt ist nicht verfügbar |