Produkte > INFINEON / IR > IRLS3813TRLPBF
IRLS3813TRLPBF

IRLS3813TRLPBF Infineon / IR


Infineon_IRLS3813_DataSheet_v01_01_EN-1733026.pdf Hersteller: Infineon / IR
MOSFET 30V Single N-Channel HEXFET
auf Bestellung 7730 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.11 EUR
10+5.49 EUR
100+4.51 EUR
500+3.85 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IRLS3813TRLPBF Infineon / IR

Description: MOSFET N-CH 30V 160A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), Rds On (Max) @ Id, Vgs: 1.95mOhm @ 148A, 10V, Power Dissipation (Max): 195W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 150µA, Supplier Device Package: D²PAK (TO-263AB), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 8020 pF @ 25 V.

Weitere Produktangebote IRLS3813TRLPBF

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IRLS3813TRLPBF IRLS3813TRLPBF Hersteller : Infineon Technologies infineon-irls3813-datasheet-v01_01-en.pdf Trans MOSFET N-CH Si 30V 247A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLS3813TRLPBF Hersteller : INFINEON TECHNOLOGIES irls3813pbf.pdf?fileId=5546d462533600a401535671d1082710 IRLS3813TRLPBF SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLS3813TRLPBF IRLS3813TRLPBF Hersteller : Infineon Technologies irls3813pbf.pdf?fileId=5546d462533600a401535671d1082710 Description: MOSFET N-CH 30V 160A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 148A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: D²PAK (TO-263AB)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8020 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH