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IRLS3813TRLPBF Infineon / IR


Infineon_IRLS3813_DataSheet_v01_01_EN-1733026.pdf
Hersteller: Infineon / IR
MOSFET 30V Single N-Channel HEXFET
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Technische Details IRLS3813TRLPBF Infineon / IR

Description: MOSFET N-CH 30V 160A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 8020 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: D²PAK (TO-263AB), Vgs(th) (Max) @ Id: 2.35V @ 150µA, Power Dissipation (Max): 195W (Tc), Rds On (Max) @ Id, Vgs: 1.95mOhm @ 148A, 10V, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).

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IRLS3813TRLPBF IRLS3813TRLPBF Infineon Technologies irls3813pbf.pdf?fileId=5546d462533600a401535671d1082710 Description: MOSFET N-CH 30V 160A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 8020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263AB)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Power Dissipation (Max): 195W (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 148A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLS3813TRLPBF irls3813pbf.pdf?fileId=5546d462533600a401535671d1082710
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 160A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 8020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263AB)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Power Dissipation (Max): 195W (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 148A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH