IRLU014NPBF Infineon Technologies
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details IRLU014NPBF Infineon Technologies
Description: MOSFET N-CH 55V 10A I-PAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 6A, 10V, Power Dissipation (Max): 28W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: IPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 25 V.
Weitere Produktangebote IRLU014NPBF
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
IRLU014NPBF | Hersteller : IR - ASA only Supplier | Trans MOSFET N-CH Si 55V 10A 3-Pin(3+Tab) IPAK |
Produkt ist nicht verfügbar |
||
IRLU014NPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 10A I-PAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 6A, 10V Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 25 V |
Produkt ist nicht verfügbar |
||
IRLU014NPBF | Hersteller : Infineon / IR | MOSFET 55V 1 N-CH HEXFET 140mOhms 5.3nC |
Produkt ist nicht verfügbar |