IRLU120NPBF
Produktcode: 48939
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Lieblingsprodukt
Hersteller: IR
Gehäuse: TO-251
Uds,V: 100 V
Idd,A: 10 A
Rds(on), Ohm: 0,185 Ohm
Ciss, pF/Qg, nC: 440/20
JHGF: THT
ZCODE: 8542 31 90 00
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Technische Details IRLU120NPBF IR
- MOSFET, N, 100V, 11A, I-PAK
- Transistor Polarity:N
- Max Voltage Vds:100V
- On State Resistance:0.185ohm
- Power Dissipation:48W
- Transistor Case Style:I-PAK
- Alternate Case Style:I-PAK
- Case Style:I-PAK
- Cont Current Id:10A
- Current Temperature:25`C
- Full Power Rating Temperature:25`C
- Junction to Case Thermal Resistance A:3.2`C/W
- Max Voltage Vgs th:2V
- On State resistance @ Vgs = 10V:0.185ohm
- Power Dissipation Pd:48W
- Pulse Current Idm:35A
- Termination Type:Through Hole
- Transistor Type:MOSFET
- Typ Voltage Vds:100V
- Typ Voltage Vgs th:2V
- Voltage Vds:100V
- Voltage Vgs Rds on Measurement:10V
Weitere Produktangebote IRLU120NPBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| IRLU120NPBF | International Rectifier |
 I-Pak Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
IRLU120NPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 10A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: IPAK (TO-251AA) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IRLU120NPBF | Infineon Technologies |
MOSFETs MOSFT 100V 11A 185mOhm 13.3nC LogLv |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRLU120NPBF |
|
Hersteller: International Rectifier
I-Pak Транзистори
I-Pak Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRLU120NPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 10A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Description: MOSFET N-CH 100V 10A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRLU120NPBF |
|
Hersteller: Infineon Technologies
MOSFETs MOSFT 100V 11A 185mOhm 13.3nC LogLv
MOSFETs MOSFT 100V 11A 185mOhm 13.3nC LogLv
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH