IRLU3110ZPBF
Produktcode: 32113
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Lieblingsprodukt
Hersteller: IR
Gehäuse: D-Pak
Uds,V: 100
Idd,A: 63
Rds(on), Ohm: 0.014
Ciss, pF/Qg, nC: 3980/34
Bem.: Керування логічним рівнем
JHGF: SMD
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Technische Details IRLU3110ZPBF IR
- MOSFET, N, 100V, I-PAK
- Transistor Type:MOSFET
- Transistor Polarity:N
- Typ Voltage Vds:100V
- Cont Current Id:63A
- On State Resistance:14ohm
- Voltage Vgs Rds on Measurement:10V
- Typ Voltage Vgs th:2.5V
- Case Style:I-PAK
- Termination Type:Through Hole
- Cont Current Id @ 100`C:45A
- Cont Current Id @ 25`C:63A
- Max Voltage Vds:100V
- Max Voltage Vgs th:2.5V
- Min Voltage Vgs th:1V
- Power Dissipation Pd:140W
- Pulse Current Idm:250A
- Rds Measurement Voltage:10V
- Voltage Vds:100V
- Rth:1.05
- Transistor Case Style:I-PAK
Weitere Produktangebote IRLU3110ZPBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
IRLU3110ZPBF | Infineon Technologies |
 Description: MOSFET N-CH 100V 42A IPAKPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 38A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: IPAK (TO-251AA) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IRLU3110ZPBF | Infineon Technologies |
MOSFETs MOSFT 100V 63A 14mOhm 34nC Log Lvl |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRLU3110ZPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 42A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 38A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 25 V
Description: MOSFET N-CH 100V 42A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 38A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRLU3110ZPBF |
|
Hersteller: Infineon Technologies
MOSFETs MOSFT 100V 63A 14mOhm 34nC Log Lvl
MOSFETs MOSFT 100V 63A 14mOhm 34nC Log Lvl
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH