IRLU3714TR Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 36A TO251AA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 3V @ 250µA
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Technische Details IRLU3714TR Vishay Siliconix
Description: MOSFET N-CH 20V 36A TO251AA, Power Dissipation (Max): 47W (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±20V, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-251AA, Vgs(th) (Max) @ Id: 3V @ 250µA.