IRLU8259 PBF
Produktcode: 25379
Hersteller: IRGehäuse: I-Pak
Uds,V: 25
Idd,A: 57
Rds(on), Ohm: 0.0087
Ciss, pF/Qg, nC: 08.06.900
Bem.: Керування логічним рівнем
JHGF: THT
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Technische Details IRLU8259 PBF IR
- MOSFET,N-CH 25V 57A IPAK
- Transistor Type:Power MOSFET
- Max Current Id:57A
- Max Voltage Vds:25V
- On State Resistance:8.7mohm
- Rds Measurement Voltage:10V
- Max Voltage Vgs:20V
- Power Dissipation:48W
- Operating Temperature Range:-55`C to +175`C
- Transistor Case Style:I-PAK
- No. of Pins:3
- Case Style:I-PAK
- Cont Current Id:21A
- Max Voltage Vgs th:2.35V
- Power Dissipation Pd:48W
- Termination Type:Through Hole
- Transistor Polarity:N
- Typ Voltage Vds:25V
- Typ Voltage Vgs th:1.9V
- Voltage Vgs Rds on Measurement:10V
Weitere Produktangebote IRLU8259 PBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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IRLU8259PBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 25V 57A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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IRLU8259PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 25V 57A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 21A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: I-PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 13 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 13 |
Produkt ist nicht verfügbar |