IRS2101SPBF Infineon Technologies
auf Bestellung 2565 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2565+ | 0.44 EUR |
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Produktbewertung abgeben
Technische Details IRS2101SPBF Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Voltage - Supply: 10V ~ 20V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 600 V, Supplier Device Package: 8-SOIC, Rise / Fall Time (Typ): 70ns, 35ns, Channel Type: Independent, Driven Configuration: High-Side or Low-Side, Number of Drivers: 2, Gate Type: IGBT, MOSFET (N-Channel), Logic Voltage - VIL, VIH: 0.8V, 2.5V, Current - Peak Output (Source, Sink): 290mA, 600mA, Part Status: Not For New Designs, DigiKey Programmable: Not Verified.
Weitere Produktangebote IRS2101SPBF nach Preis ab 0.44 EUR bis 3.04 EUR
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IRS2101SPBF | Hersteller : Infineon Technologies |
 Driver 600V 2-OUT High Side/Low Side Non-Inv 8-Pin SOIC N Tube |
auf Bestellung 2620 Stücke: Lieferzeit 14-21 Tag (e) |
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IRS2101SPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 230ns Turn-off time: 185ns Part status: Not recommended for new designs Anzahl je Verpackung: 1 Stücke |
auf Bestellung 172 Stücke: Lieferzeit 7-14 Tag (e) |
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IRS2101SPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 230ns Turn-off time: 185ns Part status: Not recommended for new designs |
auf Bestellung 172 Stücke: Lieferzeit 14-21 Tag (e) |
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IRS2101SPBF | Hersteller : Infineon Technologies |
Gate Drivers HI LO SIDE DRVR 600V 160ns 130mA |
auf Bestellung 12246 Stücke: Lieferzeit 10-14 Tag (e) |
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IRS2101SPBF | Hersteller : Infineon Technologies |
Driver 600V 2-OUT High Side/Low Side Non-Inv 8-Pin SOIC N Tube |
auf Bestellung 3790 Stücke: Lieferzeit 14-21 Tag (e) |
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IRS2101SPBF | Hersteller : Infineon Technologies |
Description: IC GATE DRVR HI/LOW SIDE 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 70ns, 35ns Channel Type: Independent Driven Configuration: High-Side or Low-Side Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Part Status: Not For New Designs DigiKey Programmable: Not Verified |
auf Bestellung 2427 Stücke: Lieferzeit 10-14 Tag (e) |
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IRS2101SPBF | Hersteller : Infineon Technologies |
Driver 600V 0.6A 2-OUT High and Low Side Non-Inv 8-Pin SOIC N Tube |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRS2101SPBF Produktcode: 118999
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