IRS2123SPBF Infineon / IR
auf Bestellung 303 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.75 EUR |
| 10+ | 3.19 EUR |
| 95+ | 2.53 EUR |
| 570+ | 2.22 EUR |
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Technische Details IRS2123SPBF Infineon / IR
Description: IC GATE DRVR HIGH-SIDE 8SOIC, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Voltage - Supply: 10V ~ 20V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 600 V, Supplier Device Package: 8-SOIC, Rise / Fall Time (Typ): 80ns, 80ns, Channel Type: Single, Driven Configuration: High-Side, Number of Drivers: 1, Gate Type: IGBT, N-Channel MOSFET, Current - Peak Output (Source, Sink): 500mA, 500mA, Part Status: Obsolete, DigiKey Programmable: Not Verified.
Weitere Produktangebote IRS2123SPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IRS2123SPBF | Hersteller : Infineon Technologies |
 Description: IC GATE DRVR HIGH-SIDE 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 80ns, 80ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Current - Peak Output (Source, Sink): 500mA, 500mA Part Status: Obsolete DigiKey Programmable: Not Verified |
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