IS41LV16100C-50TI ISSI, Integrated Silicon Solution Inc

Description: IC DRAM 16MBIT PAR 50TSOP II, Write Cycle Time - Word, Page: 85ns, Part Status: Obsolete, Supplier Device Package: 50-TSOP II, Memory Format: DRAM, Technology: DRAM - EDO, Voltage - Supply: 2.97V ~ 3.63V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile, Memory Size: 16Mbit, Mounting Type: Surface Mount, Package / Case: 50-TSOP (0.400", 10.16mm Width), 44 Leads, Packaging: Tray, Memory Organization: 1M x 16, Access Time: 25 ns, Memory Interface: Parallel.