Technische Details IS43DR16160B-3DBI ISSI
Description: IC DRAM 256MBIT PAR 84TWBGA, Packaging: Tray, Package / Case: 84-TFBGA, Mounting Type: Surface Mount, Memory Size: 256Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.7V ~ 1.9V, Technology: SDRAM - DDR2, Clock Frequency: 333 MHz, Memory Format: DRAM, Supplier Device Package: 84-TWBGA (8x12.5), Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 450 ps, Memory Organization: 16M x 16, DigiKey Programmable: Not Verified.
Weitere Produktangebote IS43DR16160B-3DBI
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IS43DR16160B-3DBI | Hersteller : Integrated Silicon Solution |
 DRAM Chip DDR2 SDRAM 256Mbit 16Mx16 1.8V 84-Pin TW-BGA |
Produkt ist nicht verfügbar |
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IS43DR16160B-3DBI | Hersteller : ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 256MBIT PAR 84TWBGA Packaging: Tray Package / Case: 84-TFBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SDRAM - DDR2 Clock Frequency: 333 MHz Memory Format: DRAM Supplier Device Package: 84-TWBGA (8x12.5) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 450 ps Memory Organization: 16M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |