IS43DR86400E-3DBLI ISSI, Integrated Silicon Solution Inc
Hersteller: ISSI, Integrated Silicon Solution IncDescription: IC DRAM 512MBIT PAR 60TWBGA
Packaging: Tray
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 333 MHz
Memory Format: DRAM
Supplier Device Package: 60-TWBGA (8x10.5)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 450 ps
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
auf Bestellung 2635 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.51 EUR |
| 10+ | 6.07 EUR |
| 25+ | 5.89 EUR |
| 40+ | 5.80 EUR |
| 80+ | 5.66 EUR |
| 242+ | 5.44 EUR |
| 484+ | 5.42 EUR |
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Technische Details IS43DR86400E-3DBLI ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 512MBIT PAR 60TWBGA, Packaging: Tray, Package / Case: 60-TFBGA, Mounting Type: Surface Mount, Memory Size: 512Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.7V ~ 1.9V, Technology: SDRAM - DDR2, Clock Frequency: 333 MHz, Memory Format: DRAM, Supplier Device Package: 60-TWBGA (8x10.5), Part Status: Active, Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 450 ps, Memory Organization: 64M x 8, DigiKey Programmable: Not Verified.
Weitere Produktangebote IS43DR86400E-3DBLI nach Preis ab 6.09 EUR bis 7.04 EUR
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IS43DR86400E-3DBLI | Hersteller : ISSI |
DRAM 512M, 1.8V, DDR2, 64Mx8, 333Mhz a. CL5, 60 ball BGA (8mmx10.5mm) RoHS, IT |
auf Bestellung 320 Stücke: Lieferzeit 10-14 Tag (e) |
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| IS43DR86400E-3DBLI | Hersteller : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60 Operating temperature: -40...85°C Kind of memory: DDR2; SDRAM Memory organisation: 16Mx8bitx4 Access time: 15ns Clock frequency: 333MHz Kind of package: in-tray; tube Kind of interface: parallel Memory: 512Mb DRAM Mounting: SMD Case: TWBGA60 Supply voltage: 1.7...1.9V DC Type of integrated circuit: DRAM memory Anzahl je Verpackung: 242 Stücke |
Produkt ist nicht verfügbar |
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| IS43DR86400E-3DBLI | Hersteller : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60 Operating temperature: -40...85°C Kind of memory: DDR2; SDRAM Memory organisation: 16Mx8bitx4 Access time: 15ns Clock frequency: 333MHz Kind of package: in-tray; tube Kind of interface: parallel Memory: 512Mb DRAM Mounting: SMD Case: TWBGA60 Supply voltage: 1.7...1.9V DC Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |