| Anzahl | Preis |
|---|---|
| 1+ | 20.47 EUR |
| 10+ | 19.01 EUR |
| 25+ | 18.43 EUR |
| 50+ | 17.56 EUR |
| 100+ | 17.14 EUR |
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Technische Details IS43LR32160C-6BLI ISSI
Description: IC DRAM 512MBIT PAR 90TFBGA, DigiKey Programmable: Not Verified, Memory Organization: 16M x 32, Access Time: 5.5 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 12ns, Supplier Device Package: 90-TFBGA (8x13), Memory Format: DRAM, Clock Frequency: 166 MHz, Technology: SDRAM - Mobile LPDDR, Voltage - Supply: 1.7V ~ 1.95V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile, Memory Size: 512Mbit, Mounting Type: Surface Mount, Package / Case: 90-TFBGA, Packaging: Tray.
Weitere Produktangebote IS43LR32160C-6BLI
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IS43LR32160C-6BLI | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 512MBIT PAR 90TFBGADigiKey Programmable: Not Verified Memory Organization: 16M x 32 Access Time: 5.5 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 12ns Supplier Device Package: 90-TFBGA (8x13) Memory Format: DRAM Clock Frequency: 166 MHz Technology: SDRAM - Mobile LPDDR Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 512Mbit Mounting Type: Surface Mount Package / Case: 90-TFBGA Packaging: Tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IS43LR32160C-6BLI |
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Hersteller: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 512MBIT PAR 90TFBGA
DigiKey Programmable: Not Verified
Memory Organization: 16M x 32
Access Time: 5.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 12ns
Supplier Device Package: 90-TFBGA (8x13)
Memory Format: DRAM
Clock Frequency: 166 MHz
Technology: SDRAM - Mobile LPDDR
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Packaging: Tray
Description: IC DRAM 512MBIT PAR 90TFBGA
DigiKey Programmable: Not Verified
Memory Organization: 16M x 32
Access Time: 5.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 12ns
Supplier Device Package: 90-TFBGA (8x13)
Memory Format: DRAM
Clock Frequency: 166 MHz
Technology: SDRAM - Mobile LPDDR
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH


