IS61NLP12836EC-200B3LI ISSI, Integrated Silicon Solution Inc
Hersteller: ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 4.5MBIT PAR 165TFBGA
Packaging: Tray
Package / Case: 165-TBGA
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-TFBGA (13x15)
Memory Interface: Parallel
Access Time: 3.1 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
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Technische Details IS61NLP12836EC-200B3LI ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 4.5MBIT PAR 165TFBGA, Packaging: Tray, Package / Case: 165-TBGA, Mounting Type: Surface Mount, Memory Size: 4.5Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 3.135V ~ 3.465V, Technology: SRAM - Synchronous, SDR, Clock Frequency: 200 MHz, Memory Format: SRAM, Supplier Device Package: 165-TFBGA (13x15), Memory Interface: Parallel, Access Time: 3.1 ns, Memory Organization: 128K x 36, DigiKey Programmable: Not Verified.
Weitere Produktangebote IS61NLP12836EC-200B3LI
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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IS61NLP12836EC-200B3LI | Hersteller : ISSI |
SRAM 4Mb,"No-Wait"/Pipeline,Sync with ECC,128K x 36,200Mhz,3.3v I/O, 165 Ball BGA, RoHS |
Produkt ist nicht verfügbar |
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| IS61NLP12836EC-200B3LI | Hersteller : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TFBGA165 Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Kind of interface: parallel Case: TFBGA165 Access time: 3.1ns Operating voltage: 3.3V Memory: 4.5Mb SRAM Memory organisation: 128kx36bit Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |