Technische Details IS61NLP12836EC-200B3LI ISSI
Category: Parallel SRAM memories - integ. circ., Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TFBGA165, Operating temperature: -40...85°C, Kind of package: in-tray; tube, Case: TFBGA165, Mounting: SMD, Kind of memory: SRAM, Memory organisation: 128kx36bit, Access time: 3.1ns, Kind of interface: parallel, Memory: 4.5Mb SRAM, Operating voltage: 3.3V, Type of integrated circuit: SRAM memory, Anzahl je Verpackung: 144 Stücke.
Weitere Produktangebote IS61NLP12836EC-200B3LI
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IS61NLP12836EC-200B3LI | Hersteller : ISSI |
 Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TFBGA165 Operating temperature: -40...85°C Kind of package: in-tray; tube Case: TFBGA165 Mounting: SMD Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 3.1ns Kind of interface: parallel Memory: 4.5Mb SRAM Operating voltage: 3.3V Type of integrated circuit: SRAM memory Anzahl je Verpackung: 144 Stücke |
Produkt ist nicht verfügbar |
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IS61NLP12836EC-200B3LI | Hersteller : ISSI, Integrated Silicon Solution Inc |
Description: IC SRAM 4.5M PARALLEL 165TFBGA |
Produkt ist nicht verfügbar |
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IS61NLP12836EC-200B3LI | Hersteller : ISSI |
SRAM 4Mb,"No-Wait"/Pipeline,Sync with ECC,128K x 36,200Mhz,3.3v I/O, 165 Ball BGA, RoHS |
Produkt ist nicht verfügbar |
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| IS61NLP12836EC-200B3LI | Hersteller : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TFBGA165 Operating temperature: -40...85°C Kind of package: in-tray; tube Case: TFBGA165 Mounting: SMD Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 3.1ns Kind of interface: parallel Memory: 4.5Mb SRAM Operating voltage: 3.3V Type of integrated circuit: SRAM memory |
Produkt ist nicht verfügbar |