Technische Details IS61NLP25636B-200TQLI ISSI
Category: Parallel SRAM memories - integ. circ., Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel, Case: QFP100, Operating voltage: 3.3V, Type of integrated circuit: SRAM memory, Kind of memory: SRAM, Memory organisation: 256kx36bit, Access time: 3.1ns, Kind of package: in-tray; tube, Kind of interface: parallel, Memory: 9Mb SRAM, Mounting: SMD, Operating temperature: -40...85°C, Anzahl je Verpackung: 72 Stücke.
Weitere Produktangebote IS61NLP25636B-200TQLI
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| IS61NLP25636B-200TQLI | Hersteller : ISSI |
 Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel Case: QFP100 Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx36bit Access time: 3.1ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 9Mb SRAM Mounting: SMD Operating temperature: -40...85°C Anzahl je Verpackung: 72 Stücke |
Produkt ist nicht verfügbar |
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IS61NLP25636B-200TQLI | Hersteller : ISSI |
SRAM PIPE.No-Wait, 200Mhz 256K x36, 3.3v I/O |
Produkt ist nicht verfügbar |
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| IS61NLP25636B-200TQLI | Hersteller : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel Case: QFP100 Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx36bit Access time: 3.1ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 9Mb SRAM Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |