Technische Details IS61NLP51218B-200TQLI-TR ISSI
Category: Parallel SRAM memories - integ. circ., Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel, Case: QFP100, Mounting: SMD, Kind of memory: SRAM, Type of integrated circuit: SRAM memory, Operating temperature: -40...85°C, Access time: 3.1ns, Operating voltage: 3.3V, Memory: 9Mb SRAM, Memory organisation: 512kx18bit, Kind of package: reel; tape, Kind of interface: parallel.
Weitere Produktangebote IS61NLP51218B-200TQLI-TR
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| IS61NLP51218B-200TQLI-TR | Hersteller : ISSI |
 Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory: 9Mb SRAM Memory organisation: 512kx18bit Kind of package: reel; tape Kind of interface: parallel |
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