IS61WV51216EDBLL-10BLI ISSI, Integrated Silicon Solution Inc
Hersteller: ISSI, Integrated Silicon Solution IncDescription: IC SRAM 8MBIT PARALLEL 48TFBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.4V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
auf Bestellung 4587 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 13.68 EUR |
| 10+ | 12.96 EUR |
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Technische Details IS61WV51216EDBLL-10BLI ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 8MBIT PARALLEL 48TFBGA, Packaging: Tray, Package / Case: 48-TFBGA, Mounting Type: Surface Mount, Memory Size: 8Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.4V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 48-TFBGA (6x8), Write Cycle Time - Word, Page: 10ns, Memory Interface: Parallel, Access Time: 10 ns, Memory Organization: 512K x 16, DigiKey Programmable: Not Verified.
Weitere Produktangebote IS61WV51216EDBLL-10BLI nach Preis ab 13.57 EUR bis 13.76 EUR
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IS61WV51216EDBLL-10BLI | Hersteller : ISSI |
SRAM 8M, 2.4-3.6V, 10ns 512Kx16 Asych SRAM |
auf Bestellung 409 Stücke: Lieferzeit 10-14 Tag (e) |
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| IS61WV51216EDBLL-10BLI | Hersteller : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V Anzahl je Verpackung: 480 Stücke |
Produkt ist nicht verfügbar |
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| IS61WV51216EDBLL-10BLI | Hersteller : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V |
Produkt ist nicht verfügbar |