IS66WV51216EALL-70BLI-TR ISSI, Integrated Silicon Solution Inc
Hersteller: ISSI, Integrated Silicon Solution Inc
Description: IC PSRAM 8MBIT PARALLEL 48TFBGA
DigiKey Programmable: Not Verified
Memory Organization: 512K x 16
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Supplier Device Package: 48-TFBGA (6x8)
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Packaging: Tape & Reel (TR)
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Technische Details IS66WV51216EALL-70BLI-TR ISSI, Integrated Silicon Solution Inc
Description: IC PSRAM 8MBIT PARALLEL 48TFBGA, DigiKey Programmable: Not Verified, Memory Organization: 512K x 16, Access Time: 70 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 70ns, Supplier Device Package: 48-TFBGA (6x8), Memory Format: PSRAM, Technology: PSRAM (Pseudo SRAM), Voltage - Supply: 1.7V ~ 1.95V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile, Memory Size: 8Mbit, Mounting Type: Surface Mount, Package / Case: 48-TFBGA, Packaging: Tape & Reel (TR).
Weitere Produktangebote IS66WV51216EALL-70BLI-TR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
IS66WV51216EALL-70BLI-TR | ISSI |
SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,1.7v 1.95v,48 Ball BGA (6x8mm), RoHS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IS66WV51216EALL-70BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.7÷1.95V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 1.7...1.95V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IS66WV51216EALL-70BLI-TR |
|
Hersteller: ISSI
SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,1.7v 1.95v,48 Ball BGA (6x8mm), RoHS
SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,1.7v 1.95v,48 Ball BGA (6x8mm), RoHS
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IS66WV51216EALL-70BLI-TR |
|
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH