ISA170170N04LMDSXTMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 452+ | 0.32 EUR |
| 487+ | 0.3 EUR |
| 492+ | 0.29 EUR |
| 512+ | 0.27 EUR |
| 1000+ | 0.24 EUR |
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Technische Details ISA170170N04LMDSXTMA1 Infineon Technologies
Description: ISA170170N04LMDSXTMA1, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W (Ta), 2.5W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 9.6A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V, Rds On (Max) @ Id, Vgs: 17mOhm @ 9.6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.7V @ 1mA, Supplier Device Package: PG-DSO-8-920.
Weitere Produktangebote ISA170170N04LMDSXTMA1 nach Preis ab 0.21 EUR bis 1.71 EUR
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ISA170170N04LMDSXTMA1 | Infineon Technologies |
 Trans MOSFET N-CH 40V 7.2A 8-Pin DSO T/R |
auf Bestellung 3951 Stücke: Lieferzeit 14-21 Tag (e) |
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ISA170170N04LMDSXTMA1 | Infineon Technologies |
Description: ISA170170N04LMDSXTMA1 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta), 2.5W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 9.6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V Rds On (Max) @ Id, Vgs: 17mOhm @ 9.6A, 10V Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.7V @ 1mA Supplier Device Package: PG-DSO-8-920 |
auf Bestellung 395 Stücke: Lieferzeit 10-14 Tag (e) |
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ISA170170N04LMDSXTMA1 | Infineon Technologies |
MOSFETs OptiMOS Dual power MOSFET 40V |
auf Bestellung 355 Stücke: Lieferzeit 10-14 Tag (e) |
|
| ISA170170N04LMDSXTMA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 40V 7.2A 8-Pin DSO T/R
Trans MOSFET N-CH 40V 7.2A 8-Pin DSO T/R
auf Bestellung 3951 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 422+ | 0.35 EUR |
| 448+ | 0.32 EUR |
| 452+ | 0.3 EUR |
| 487+ | 0.27 EUR |
| 492+ | 0.25 EUR |
| 512+ | 0.23 EUR |
| 1000+ | 0.21 EUR |
| ISA170170N04LMDSXTMA1 |
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Hersteller: Infineon Technologies
Description: ISA170170N04LMDSXTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 9.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
Description: ISA170170N04LMDSXTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 9.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
auf Bestellung 395 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.65 EUR |
| 18+ | 1.03 EUR |
| 100+ | 0.67 EUR |
| ISA170170N04LMDSXTMA1 |
|
Hersteller: Infineon Technologies
MOSFETs OptiMOS Dual power MOSFET 40V
MOSFETs OptiMOS Dual power MOSFET 40V
auf Bestellung 355 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.71 EUR |
| 10+ | 1.06 EUR |
| 100+ | 0.69 EUR |
| 500+ | 0.53 EUR |
| 1000+ | 0.48 EUR |
| 2000+ | 0.4 EUR |
| 4000+ | 0.37 EUR |