ISC008N06LM6ATMA1 Infineon Technologies
auf Bestellung 3448 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.21 EUR |
| 10+ | 4.29 EUR |
| 100+ | 3.66 EUR |
| 500+ | 3.29 EUR |
| 1000+ | 2.94 EUR |
| 2500+ | 2.9 EUR |
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Technische Details ISC008N06LM6ATMA1 Infineon Technologies
MOSFETs OptiMOS 6 Power Transistor, 60 V.
Weitere Produktangebote ISC008N06LM6ATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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ISC008N06LM6ATMA1 | Hersteller : Infineon Technologies |
 Description: TRENCH 40<-<100VPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 221W (Tc) Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V |
Produkt ist nicht verfügbar |
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ISC008N06LM6ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH 40<-<100V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 221W (Tc) Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V |
Produkt ist nicht verfügbar |