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ISC009N03LF2SATMA1

ISC009N03LF2SATMA1 Infineon Technologies


Hersteller: Infineon Technologies
Description: ISC009N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 341A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 15 V
auf Bestellung 4390 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.18 EUR
12+1.59 EUR
25+1.44 EUR
100+1.27 EUR
250+1.20 EUR
500+1.15 EUR
1000+1.11 EUR
2500+1.07 EUR
Mindestbestellmenge: 9
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Technische Details ISC009N03LF2SATMA1 Infineon Technologies

Description: ISC009N03LF2SATMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 341A (Tc), Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V, Power Dissipation (Max): 3W (Ta), 188W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 100µA, Supplier Device Package: PG-TDSON-8-62, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 15 V.

Weitere Produktangebote ISC009N03LF2SATMA1 nach Preis ab 1.02 EUR bis 2.82 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ISC009N03LF2SATMA1 ISC009N03LF2SATMA1 Hersteller : Infineon Technologies Infineon_ISC009N03LF2S_DataSheet_v01_01_EN-3538909.pdf TRENCH <= 40V
auf Bestellung 5000 Stücke:
Lieferzeit 190-194 Tag (e)
Anzahl Preis
1+2.82 EUR
10+1.90 EUR
100+1.51 EUR
500+1.26 EUR
1000+1.09 EUR
2500+1.04 EUR
5000+1.02 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ISC009N03LF2SATMA1 ISC009N03LF2SATMA1 Hersteller : Infineon Technologies Description: ISC009N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 341A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH