auf Bestellung 12729 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 12.04 EUR |
| 10+ | 10.84 EUR |
| 25+ | 9.52 EUR |
| 100+ | 8.87 EUR |
| 250+ | 8.22 EUR |
| 500+ | 7.57 EUR |
| 1000+ | 6.27 EUR |
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Technische Details ISC009N06LM5ATMA1 Infineon Technologies
Description: MOSFET N-CH 60V 41A/348A TSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 348A (Tc), Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V, Power Dissipation (Max): 3W (Ta), 214W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 147µA, Supplier Device Package: PG-TSON-8-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 209 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V.
Weitere Produktangebote ISC009N06LM5ATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| ISC009N06LM5ATMA1 | Hersteller : Infineon Technologies |
 SP005400730 |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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ISC009N06LM5ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 41A/348A TSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 348A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 147µA Supplier Device Package: PG-TSON-8-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 209 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V |
Produkt ist nicht verfügbar |
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ISC009N06LM5ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 41A/348A TSON-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 348A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 147µA Supplier Device Package: PG-TSON-8-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 209 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V |
Produkt ist nicht verfügbar |