| Anzahl | Preis |
|---|---|
| 1+ | 8.2 EUR |
| 10+ | 5.46 EUR |
| 100+ | 3.92 EUR |
| 500+ | 3.78 EUR |
| 1000+ | 3.64 EUR |
| 5000+ | 3.52 EUR |
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Technische Details ISC009N06LM5ATMA1 Infineon Technologies
Description: MOSFET N-CH 60V 41A/348A TSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 348A (Tc), Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V, Power Dissipation (Max): 3W (Ta), 214W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 147µA, Supplier Device Package: PG-TSON-8-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 209 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V.
Weitere Produktangebote ISC009N06LM5ATMA1 nach Preis ab 3.76 EUR bis 10.12 EUR
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ISC009N06LM5ATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 60V 41A/348A TSON-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 348A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 147µA Supplier Device Package: PG-TSON-8-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 209 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V |
auf Bestellung 2223 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISC009N06LM5ATMA1 | International Rectifier/Infineon |
N-канальний ПТ, Udss, В = 60, Id = 348, Ciss, пФ @ Uds, В = 13000 @ 30, Qg, нКл = 209, Rds = 0,9 Ом, Ugs(th) = 2,3 В, Р, Вт = 214, Тексп, °C = -55...+175, Тип монт. = SMD,... Транзистори Корпус: PowerTDFN-8 Од. вим: шт Anzahl je Verpackung: 5000 Stücke |
verfügbar 6 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| ISC009N06LM5ATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 41A/348A TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 348A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 147µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 209 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
Description: MOSFET N-CH 60V 41A/348A TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 348A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 147µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 209 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
auf Bestellung 2223 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 10.12 EUR |
| 10+ | 6.75 EUR |
| 100+ | 4.83 EUR |
| 500+ | 4.01 EUR |
| 1000+ | 3.76 EUR |
| ISC009N06LM5ATMA1 |
|
Hersteller: International Rectifier/Infineon
N-канальний ПТ, Udss, В = 60, Id = 348, Ciss, пФ @ Uds, В = 13000 @ 30, Qg, нКл = 209, Rds = 0,9 Ом, Ugs(th) = 2,3 В, Р, Вт = 214, Тексп, °C = -55...+175, Тип монт. = SMD,... Транзистори Корпус: PowerTDFN-8 Од. вим: шт
Anzahl je Verpackung: 5000 Stücke
N-канальний ПТ, Udss, В = 60, Id = 348, Ciss, пФ @ Uds, В = 13000 @ 30, Qg, нКл = 209, Rds = 0,9 Ом, Ugs(th) = 2,3 В, Р, Вт = 214, Тексп, °C = -55...+175, Тип монт. = SMD,... Транзистори Корпус: PowerTDFN-8 Од. вим: шт
Anzahl je Verpackung: 5000 Stücke
verfügbar 6 Stücke: