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ISC010N06NM5ATMA1

ISC010N06NM5ATMA1 Infineon Technologies

Infineon-ISC010N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017be8e677d07aaf Hersteller: Infineon Technologies
Description: OPTIMOS5 60 V POWER MOSFET IN SU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
auf Bestellung 3565 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.27 EUR
10+ 5.27 EUR
100+ 4.27 EUR
500+ 3.79 EUR
1000+ 3.25 EUR
2000+ 3.06 EUR
Mindestbestellmenge: 3
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Technische Details ISC010N06NM5ATMA1 Infineon Technologies

Description: OPTIMOS5 60 V POWER MOSFET IN SU, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 330A (Tc), Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V, Power Dissipation (Max): 3W (Ta), 214W (Tc), Vgs(th) (Max) @ Id: 3.3V @ 147µA, Supplier Device Package: PG-TSON-8-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V.

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ISC010N06NM5ATMA1 ISC010N06NM5ATMA1 Hersteller : Infineon Technologies Infineon_ISC010N06NM5_DataSheet_v02_00_EN-2907921.pdf MOSFET TRENCH 40<-<100V
auf Bestellung 3804 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6.34 EUR
10+ 5.32 EUR
25+ 5.03 EUR
100+ 4.31 EUR
250+ 4.07 EUR
500+ 3.84 EUR
1000+ 3.27 EUR
ISC010N06NM5ATMA1 Hersteller : Infineon Technologies infineon-isc010n06nm5-datasheet-v02_00-en.pdf Trans MOSFET N-CH 60V 39A T/R
Produkt ist nicht verfügbar
ISC010N06NM5ATMA1 ISC010N06NM5ATMA1 Hersteller : Infineon Technologies Infineon-ISC010N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017be8e677d07aaf Description: OPTIMOS5 60 V POWER MOSFET IN SU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Produkt ist nicht verfügbar