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ISC011N04NM7VATMA1

ISC011N04NM7VATMA1 Infineon Technologies

Infenion_6-24-2025_DS_ISC011N04NM7V_1_0.pdf Hersteller: Infineon Technologies
MOSFETs OptiMOS 7 Power-Transistor, 40 V
auf Bestellung 4911 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.66 EUR
10+2.01 EUR
100+1.47 EUR
500+1.17 EUR
1000+1.08 EUR
2500+1.02 EUR
5000+0.96 EUR
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Technische Details ISC011N04NM7VATMA1 Infineon Technologies

Description: ISC011N04NM7VATMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 256A (Tc), Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 15V, Power Dissipation (Max): 3W (Ta), 136W (Tc), Vgs(th) (Max) @ Id: 3.15V @ 56µA, Supplier Device Package: PG-TDSON-8, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V.

Weitere Produktangebote ISC011N04NM7VATMA1 nach Preis ab 1.12 EUR bis 3.34 EUR

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ISC011N04NM7VATMA1 ISC011N04NM7VATMA1 Hersteller : Infineon Technologies 448_ISC011N04NM7V.pdf Description: ISC011N04NM7VATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 256A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 56µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V
auf Bestellung 4823 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.34 EUR
10+2.15 EUR
100+1.46 EUR
500+1.16 EUR
1000+1.12 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
ISC011N04NM7VATMA1 ISC011N04NM7VATMA1 Hersteller : Infineon Technologies 448_ISC011N04NM7V.pdf Description: ISC011N04NM7VATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 256A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 56µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V
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Im Einkaufswagen  Stück im Wert von  UAH