
ISC012N03LF2SATMA1 Infineon Technologies

Description: ISC012N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
auf Bestellung 4600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
12+ | 1.55 EUR |
16+ | 1.11 EUR |
25+ | 1.01 EUR |
100+ | 0.89 EUR |
250+ | 0.83 EUR |
500+ | 0.79 EUR |
1000+ | 0.77 EUR |
2500+ | 0.74 EUR |
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Technische Details ISC012N03LF2SATMA1 Infineon Technologies
Description: ISC012N03LF2SATMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 270A (Tc), Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V, Power Dissipation (Max): 3W (Ta), 167W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 80µA, Supplier Device Package: PG-TDSON-8-62, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V.
Weitere Produktangebote ISC012N03LF2SATMA1 nach Preis ab 0.74 EUR bis 2.18 EUR
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ISC012N03LF2SATMA1 | Hersteller : Infineon Technologies |
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auf Bestellung 3500 Stücke: Lieferzeit 10-14 Tag (e) |
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ISC012N03LF2SATMA1 | Hersteller : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 270A (Tc) Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 80µA Supplier Device Package: PG-TDSON-8-62 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V |
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