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ISC015N03LF2SATMA1

ISC015N03LF2SATMA1 Infineon Technologies

Infineon-ISC015N03LF2S-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c92bcf0b00193912755420fff Hersteller: Infineon Technologies
Description: ISC015N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 214A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.68 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details ISC015N03LF2SATMA1 Infineon Technologies

Description: ISC015N03LF2SATMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 214A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V, Power Dissipation (Max): 3W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 60µA, Supplier Device Package: PG-TDSON-8-62, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V.

Weitere Produktangebote ISC015N03LF2SATMA1 nach Preis ab 0.69 EUR bis 2.13 EUR

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ISC015N03LF2SATMA1 ISC015N03LF2SATMA1 Hersteller : Infineon Technologies Infineon-ISC015N03LF2S-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c92bcf0b00193912755420fff Description: ISC015N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 214A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.48 EUR
17+1.06 EUR
25+0.95 EUR
100+0.84 EUR
250+0.78 EUR
500+0.75 EUR
1000+0.72 EUR
2500+0.69 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
ISC015N03LF2SATMA1 ISC015N03LF2SATMA1 Hersteller : Infineon Technologies Infineon_ISC015N03LF2S_DataSheet_v01_01_EN-3538923.pdf TRENCH <= 40V
auf Bestellung 5000 Stücke:
Lieferzeit 190-194 Tag (e)
Anzahl Preis
2+2.13 EUR
10+1.44 EUR
100+1.01 EUR
500+0.90 EUR
1000+0.78 EUR
2500+0.73 EUR
5000+0.71 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH