ISC018N08NM6SCATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 230A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 114µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 40 V
auf Bestellung 3750 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.34 EUR |
| 10+ | 4.81 EUR |
| 25+ | 4.42 EUR |
| 100+ | 4 EUR |
| 250+ | 3.8 EUR |
| 500+ | 3.68 EUR |
| 1000+ | 3.58 EUR |
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Technische Details ISC018N08NM6SCATMA1 Infineon Technologies
Description: TRENCH 40.
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ISC018N08NM6SCATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH 40<-<100V Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 230A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 217W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 114µA Supplier Device Package: PG-WSON-8-2 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 40 V |
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