ISC019N03L5SATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 28A/100A TDSON
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Produktrezensionen
Produktbewertung abgeben
Technische Details ISC019N03L5SATMA1 Infineon Technologies
Description: MOSFET N-CH 30V 28A/100A TDSON, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PG-TDSON-8-5, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 69W (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V.
Weitere Produktangebote ISC019N03L5SATMA1 nach Preis ab 0.45 EUR bis 0.7 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
ISC019N03L5SATMA1 | Infineon Technologies |
MOSFETs TRENCH <= 40V |
auf Bestellung 8156 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
ISC019N03L5SATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 28A/100A TDSON Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8-5 Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta), 69W (Tc) |
auf Bestellung 18544 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| ISC019N03L5SATMA1 | Infineon |
|
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| ISC019N03L5SATMA1 |
|
Hersteller: Infineon Technologies
MOSFETs TRENCH <= 40V
MOSFETs TRENCH <= 40V
auf Bestellung 8156 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.64 EUR |
| 10+ | 0.57 EUR |
| 100+ | 0.53 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.51 EUR |
| 5000+ | 0.46 EUR |
| 10000+ | 0.45 EUR |
| ISC019N03L5SATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 28A/100A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Description: MOSFET N-CH 30V 28A/100A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
auf Bestellung 18544 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 25+ | 0.7 EUR |
| 26+ | 0.68 EUR |
| 100+ | 0.57 EUR |
| 500+ | 0.56 EUR |
| 1000+ | 0.55 EUR |
| 2000+ | 0.54 EUR |
| ISC019N03L5SATMA1 |
|
Hersteller: Infineon
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)