ISC019N10NM8SCATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: ISC019N10NM8SCATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 245A (Tc)
Rds On (Max) @ Id, Vgs: 1.93mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 268W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 114µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
Produktrezensionen
Produktbewertung abgeben
Technische Details ISC019N10NM8SCATMA1 Infineon Technologies
Description: ISC019N10NM8SCATMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 245A (Tc), Rds On (Max) @ Id, Vgs: 1.93mOhm @ 50A, 15V, Power Dissipation (Max): 3W (Ta), 268W (Tc), Vgs(th) (Max) @ Id: 3.2V @ 114µA, Supplier Device Package: PG-WSON-8-2, Drive Voltage (Max Rds On, Min Rds On): 8V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V.
Weitere Produktangebote ISC019N10NM8SCATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
|
ISC019N10NM8SCATMA1 | Hersteller : Infineon Technologies |
Description: ISC019N10NM8SCATMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 245A (Tc) Rds On (Max) @ Id, Vgs: 1.93mOhm @ 50A, 15V Power Dissipation (Max): 3W (Ta), 268W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 114µA Supplier Device Package: PG-WSON-8-2 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V |
Produkt ist nicht verfügbar |
|
 |
ISC019N10NM8SCATMA1 | Hersteller : Infineon Technologies |
MOSFETs OptiMOS 8 PowerMOSFET, 100 V |
Produkt ist nicht verfügbar |