ISC025N08NM5LF2ATMA1 Infineon Technologies
auf Bestellung 4990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 6.2 EUR |
| 10+ | 5.21 EUR |
| 25+ | 4.91 EUR |
| 100+ | 4.21 EUR |
| 250+ | 3.98 EUR |
| 500+ | 3.75 EUR |
| 1000+ | 3.2 EUR |
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Technische Details ISC025N08NM5LF2ATMA1 Infineon Technologies
Description: OPTIMOSTM5LINEARFET80V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 198A (Tc), Rds On (Max) @ Id, Vgs: 2.55mOhm @ 50A, 10V, Power Dissipation (Max): 3W (Ta), 217W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 115µA, Supplier Device Package: PG-TDSON-8 FL, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V.
Weitere Produktangebote ISC025N08NM5LF2ATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| ISC025N08NM5LF2ATMA1 | Hersteller : Infineon Technologies |
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ISC025N08NM5LF2ATMA1 | Hersteller : Infineon Technologies |
Description: OPTIMOSTM5LINEARFET80V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 198A (Tc) Rds On (Max) @ Id, Vgs: 2.55mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 217W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 115µA Supplier Device Package: PG-TDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V |
Produkt ist nicht verfügbar |
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ISC025N08NM5LF2ATMA1 | Hersteller : Infineon Technologies |
Description: OPTIMOSTM5LINEARFET80V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 198A (Tc) Rds On (Max) @ Id, Vgs: 2.55mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 217W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 115µA Supplier Device Package: PG-TDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V |
Produkt ist nicht verfügbar |