ISC031N08NM6SCATMA1 Infineon Technologies
auf Bestellung 490 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.39 EUR |
| 10+ | 3.73 EUR |
| 100+ | 3.19 EUR |
| 500+ | 3.08 EUR |
| 1000+ | 2.97 EUR |
| 2000+ | 2.87 EUR |
| 4000+ | 2.75 EUR |
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Technische Details ISC031N08NM6SCATMA1 Infineon Technologies
OptiMOS 6 n-channel power MOSFET 80 V.
Weitere Produktangebote ISC031N08NM6SCATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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ISC031N08NM6SCATMA1 | Hersteller : Infineon Technologies |
 Description: TRENCH 40<-<100VPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 145A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 65µA Supplier Device Package: PG-WSON-8-2 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V |
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ISC031N08NM6SCATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH 40<-<100V Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 145A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 65µA Supplier Device Package: PG-WSON-8-2 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V |
Produkt ist nicht verfügbar |