auf Bestellung 2455 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 6.42 EUR |
| 10+ | 5.4 EUR |
| 25+ | 5.09 EUR |
| 100+ | 4.36 EUR |
| 250+ | 4.12 EUR |
| 500+ | 3.87 EUR |
| 1000+ | 3.33 EUR |
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Technische Details ISC032N12LM6ATMA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 170A (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V, Power Dissipation (Max): 3W (Ta), 211W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 110µA, Supplier Device Package: PG-TDSON-8 FL, Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 60 V.
Weitere Produktangebote ISC032N12LM6ATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| ISC032N12LM6ATMA1 | Hersteller : Infineon Technologies |
 TRENCH >=100V |
Produkt ist nicht verfügbar |
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ISC032N12LM6ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 170A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 211W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 110µA Supplier Device Package: PG-TDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 60 V |
Produkt ist nicht verfügbar |
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ISC032N12LM6ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH >=100V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 170A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 211W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 110µA Supplier Device Package: PG-TDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 60 V |
Produkt ist nicht verfügbar |