ISC033N10NM8ATMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 4.56 EUR |
| 10+ | 2.94 EUR |
| 100+ | 2.11 EUR |
| 500+ | 1.78 EUR |
| 1000+ | 1.64 EUR |
| 2500+ | 1.53 EUR |
| 5000+ | 1.51 EUR |
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Technische Details ISC033N10NM8ATMA1 Infineon Technologies
Description: ISC033N10NM8ATMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 150A (Tc), Rds On (Max) @ Id, Vgs: 3.33mOhm @ 25A, 15V, Power Dissipation (Max): 3W (Ta), 179W (Tc), Vgs(th) (Max) @ Id: 3.2V @ 63µA, Supplier Device Package: PG-TDSON-8, Drive Voltage (Max Rds On, Min Rds On): 8V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 50 V.
Weitere Produktangebote ISC033N10NM8ATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| ISC033N10NM8ATMA1 | Hersteller : Infineon Technologies |
Description: ISC033N10NM8ATMA1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 3.33mOhm @ 25A, 15V Power Dissipation (Max): 3W (Ta), 179W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 63µA Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 50 V |
Produkt ist nicht verfügbar |
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| ISC033N10NM8ATMA1 | Hersteller : Infineon Technologies |
Description: ISC033N10NM8ATMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 3.33mOhm @ 25A, 15V Power Dissipation (Max): 3W (Ta), 179W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 63µA Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 50 V |
Produkt ist nicht verfügbar |