auf Bestellung 300 Stücke:
Lieferzeit 206-210 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.6 EUR |
| 10+ | 5.54 EUR |
| 25+ | 5.24 EUR |
| 100+ | 4.49 EUR |
| 250+ | 4.24 EUR |
| 500+ | 3.98 EUR |
| 1000+ | 3.4 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details ISC035N10NM5LFATMA1 Infineon Technologies
Description: OPTIMOSTM5LINEARFET100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 164A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V, Power Dissipation (Max): 3W (Ta), 217W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 115µA, Supplier Device Package: PG-TDSON-8 FL, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V.
Weitere Produktangebote ISC035N10NM5LFATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
ISC035N10NM5LFATMA1 | Hersteller : Infineon Technologies |
Description: OPTIMOSTM5LINEARFET100V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 164A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 217W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 115µA Supplier Device Package: PG-TDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V |
Produkt ist nicht verfügbar |
|
|
|
ISC035N10NM5LFATMA1 | Hersteller : Infineon Technologies |
Description: OPTIMOSTM5LINEARFET100V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 164A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 217W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 115µA Supplier Device Package: PG-TDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V |
Produkt ist nicht verfügbar |