Produkte > INFINEON TECHNOLOGIES > ISC037N12NM6ATMA1
ISC037N12NM6ATMA1

ISC037N12NM6ATMA1 Infineon Technologies

Infineon-ISC037N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a86155389 Hersteller: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.2A (Ta), 163A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 111µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 60 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+3.47 EUR
Mindestbestellmenge: 5000
Produktrezensionen
Produktbewertung abgeben

Technische Details ISC037N12NM6ATMA1 Infineon Technologies

Description: OPTIMOS 6 POWER-TRANSISTOR,120V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19.2A (Ta), 163A (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V, Power Dissipation (Max): 3W (Ta), 214W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 111µA, Supplier Device Package: PG-TDSON-8 FL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 60 V.

Weitere Produktangebote ISC037N12NM6ATMA1 nach Preis ab 3.62 EUR bis 7.43 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
ISC037N12NM6ATMA1 ISC037N12NM6ATMA1 Hersteller : Infineon Technologies Infineon_ISC037N12NM6_DataSheet_v02_00_EN-3084397.pdf MOSFET TRENCH >=100V
auf Bestellung 4907 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+7.37 EUR
10+ 6.2 EUR
25+ 5.86 EUR
100+ 5.03 EUR
250+ 4.75 EUR
500+ 4.47 EUR
1000+ 3.84 EUR
ISC037N12NM6ATMA1 ISC037N12NM6ATMA1 Hersteller : Infineon Technologies Infineon-ISC037N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a86155389 Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.2A (Ta), 163A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 111µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 60 V
auf Bestellung 14843 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.43 EUR
10+ 6.24 EUR
100+ 5.05 EUR
500+ 4.49 EUR
1000+ 3.84 EUR
2000+ 3.62 EUR
Mindestbestellmenge: 3
ISC037N12NM6ATMA1 Hersteller : Infineon Technologies infineon-isc037n12nm6-datasheet-v02_00-en.pdf Trans MOSFET N-CH 120V 19.2A 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar