ISC044N15NM6ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 156A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 75 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 75 V
auf Bestellung 4371 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.43 EUR |
| 10+ | 6.79 EUR |
| 100+ | 5.5 EUR |
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Technische Details ISC044N15NM6ATMA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 156A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 15V, Power Dissipation (Max): 3W (Ta), 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 140µA, Supplier Device Package: PG-TSON-8-3, Drive Voltage (Max Rds On, Min Rds On): 8V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 75 V, Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 75 V.
Weitere Produktangebote ISC044N15NM6ATMA1 nach Preis ab 4.45 EUR bis 8.64 EUR
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ISC044N15NM6ATMA1 | Hersteller : Infineon Technologies |
MOSFETs TRENCH >=100V |
auf Bestellung 3217 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISC044N15NM6ATMA1 | Hersteller : Infineon Technologies |
ISC044N15NM6ATMA1 |
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ISC044N15NM6ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 156A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 15V Power Dissipation (Max): 3W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 140µA Supplier Device Package: PG-TSON-8-3 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 75 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 75 V |
Produkt ist nicht verfügbar |