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ISC044N15NM6ATMA1

ISC044N15NM6ATMA1 Infineon Technologies

Infineon-ISC044N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190774086997018 Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 156A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 75 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 75 V
auf Bestellung 3640 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.41 EUR
10+6.77 EUR
100+5.49 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details ISC044N15NM6ATMA1 Infineon Technologies

Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 156A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 15V, Power Dissipation (Max): 3W (Ta), 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 140µA, Supplier Device Package: PG-TSON-8-3, Drive Voltage (Max Rds On, Min Rds On): 8V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 75 V, Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 75 V.

Weitere Produktangebote ISC044N15NM6ATMA1 nach Preis ab 4.42 EUR bis 9.89 EUR

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ISC044N15NM6ATMA1 ISC044N15NM6ATMA1 Hersteller : Infineon Technologies Infineon_ISC044N15NM6_DataSheet_v02_00_EN.pdf MOSFETs IFX FET >100-150V
auf Bestellung 962 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.89 EUR
10+6.93 EUR
100+5.61 EUR
500+5 EUR
1000+4.82 EUR
5000+4.42 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ISC044N15NM6ATMA1 ISC044N15NM6ATMA1 Hersteller : Infineon Technologies Infineon-ISC044N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190774086997018 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 156A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 75 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 75 V
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Im Einkaufswagen  Stück im Wert von  UAH