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ISC044N15NM6ATMA1

ISC044N15NM6ATMA1 Infineon Technologies


Infineon_ISC044N15NM6_DataSheet_v02_00_EN-3478279.pdf Hersteller: Infineon Technologies
MOSFETs TRENCH >=100V
auf Bestellung 3217 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.64 EUR
10+7.25 EUR
100+5.88 EUR
500+5.23 EUR
1000+4.47 EUR
5000+4.45 EUR
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Technische Details ISC044N15NM6ATMA1 Infineon Technologies

Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 156A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 15V, Power Dissipation (Max): 3W (Ta), 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 140µA, Supplier Device Package: PG-TSON-8-3, Drive Voltage (Max Rds On, Min Rds On): 8V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 75 V, Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 75 V.

Weitere Produktangebote ISC044N15NM6ATMA1 nach Preis ab 5.51 EUR bis 10.96 EUR

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ISC044N15NM6ATMA1 ISC044N15NM6ATMA1 Hersteller : Infineon Technologies Infineon-ISC044N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190774086997018 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 156A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 75 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 75 V
auf Bestellung 3052 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.96 EUR
10+8.39 EUR
100+6.68 EUR
500+5.81 EUR
1000+5.53 EUR
2000+5.51 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
ISC044N15NM6ATMA1 Hersteller : Infineon Technologies Infineon-ISC044N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190774086997018 ISC044N15NM6ATMA1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISC044N15NM6ATMA1 ISC044N15NM6ATMA1 Hersteller : Infineon Technologies Infineon-ISC044N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190774086997018 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 156A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 75 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH