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ISC046N04NM5ATMA1

ISC046N04NM5ATMA1 Infineon Technologies

Infineon-ISC046N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e494460010 Hersteller: Infineon Technologies
Description: 40V 4.6M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 35A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 17µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 20 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5000+1.17 EUR
10000+ 1.11 EUR
Mindestbestellmenge: 5000
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Technische Details ISC046N04NM5ATMA1 Infineon Technologies

Description: 40V 4.6M OPTIMOS MOSFET SUPERSO8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 77A (Tc), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 35A, 10V, Power Dissipation (Max): 3W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 17µA, Supplier Device Package: PG-TDSON-8 FL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 20 V.

Weitere Produktangebote ISC046N04NM5ATMA1 nach Preis ab 1.17 EUR bis 2.96 EUR

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Preis ohne MwSt
ISC046N04NM5ATMA1 ISC046N04NM5ATMA1 Hersteller : Infineon Technologies Infineon-ISC046N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e494460010 Description: 40V 4.6M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 35A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 17µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 20 V
auf Bestellung 14945 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+2.96 EUR
11+ 2.42 EUR
100+ 1.88 EUR
500+ 1.6 EUR
1000+ 1.3 EUR
2000+ 1.22 EUR
Mindestbestellmenge: 9
ISC046N04NM5ATMA1 ISC046N04NM5ATMA1 Hersteller : Infineon Technologies Infineon_ISC046N04NM5_DataSheet_v02_01_EN-1825726.pdf MOSFET TRENCH <= 40V
auf Bestellung 17101 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
18+2.96 EUR
22+ 2.44 EUR
100+ 1.89 EUR
500+ 1.61 EUR
1000+ 1.23 EUR
5000+ 1.17 EUR
Mindestbestellmenge: 18
ISC046N04NM5ATMA1 ISC046N04NM5ATMA1 Hersteller : Infineon Technologies isc046n04nm5atma1.pdf Trans MOSFET N-CH 40V 19A 8-Pin TDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)