auf Bestellung 1141 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.11 EUR |
| 10+ | 6.27 EUR |
| 25+ | 5.58 EUR |
| 100+ | 4.88 EUR |
| 250+ | 4.49 EUR |
| 500+ | 4.24 EUR |
| 1000+ | 3.94 EUR |
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Technische Details ISC055N15NM6ATMA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 130A (Tc), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 15V, Power Dissipation (Max): 3W (Ta), 214W (Tc), Vgs(th) (Max) @ Id: 4V @ 110µA, Supplier Device Package: PG-TDSON-8, Drive Voltage (Max Rds On, Min Rds On): 8V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V.
Weitere Produktangebote ISC055N15NM6ATMA1 nach Preis ab 4.53 EUR bis 8.18 EUR
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ISC055N15NM6ATMA1 | Hersteller : Infineon Technologies |
 Description: TRENCH >=100VPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 130A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 15V Power Dissipation (Max): 3W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 4V @ 110µA Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V |
auf Bestellung 4662 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISC055N15NM6ATMA1 | Hersteller : Infineon Technologies |
ISC055N15NM6ATMA1 |
Produkt ist nicht verfügbar |
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ISC055N15NM6ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 130A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 15V Power Dissipation (Max): 3W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 4V @ 110µA Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V |
Produkt ist nicht verfügbar |