| Anzahl | Preis |
|---|---|
| 1+ | 8.11 EUR |
| 10+ | 6.27 EUR |
| 25+ | 5.58 EUR |
| 100+ | 4.88 EUR |
| 250+ | 4.49 EUR |
| 500+ | 4.24 EUR |
| 1000+ | 3.94 EUR |
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Technische Details ISC055N15NM6ATMA1 Infineon Technologies
Description: TRENCH >=100V, Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 8V, 15V, Supplier Device Package: PG-TDSON-8, Vgs(th) (Max) @ Id: 4V @ 110µA, Power Dissipation (Max): 3W (Ta), 214W (Tc), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 15V, Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 130A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote ISC055N15NM6ATMA1 nach Preis ab 4.21 EUR bis 8.75 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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ISC055N15NM6ATMA1 | Infineon Technologies |
 Description: TRENCH >=100VInput Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Supplier Device Package: PG-TDSON-8 Vgs(th) (Max) @ Id: 4V @ 110µA Power Dissipation (Max): 3W (Ta), 214W (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 15V Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 130A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 234 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISC055N15NM6ATMA1 |
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Hersteller: Infineon Technologies
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 4V @ 110µA
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 15V
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 4V @ 110µA
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 15V
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 234 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.75 EUR |
| 10+ | 5.86 EUR |
| 100+ | 4.21 EUR |