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ISC055N15NM6ATMA1

ISC055N15NM6ATMA1 Infineon Technologies

Infineon-ISC055N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190772508436ff9 Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V
auf Bestellung 4662 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.18 EUR
10+6.23 EUR
25+5.74 EUR
100+5.20 EUR
250+4.95 EUR
500+4.79 EUR
1000+4.67 EUR
2500+4.53 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details ISC055N15NM6ATMA1 Infineon Technologies

Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 130A (Tc), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 15V, Power Dissipation (Max): 3W (Ta), 214W (Tc), Vgs(th) (Max) @ Id: 4V @ 110µA, Supplier Device Package: PG-TDSON-8, Drive Voltage (Max Rds On, Min Rds On): 8V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V.

Weitere Produktangebote ISC055N15NM6ATMA1 nach Preis ab 4.36 EUR bis 8.96 EUR

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ISC055N15NM6ATMA1 ISC055N15NM6ATMA1 Hersteller : Infineon Technologies Infineon_ISC055N15NM6_DataSheet_v02_00_EN-3478170.pdf MOSFETs TRENCH >=100V
auf Bestellung 1675 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.96 EUR
10+6.92 EUR
25+6.18 EUR
100+5.39 EUR
250+4.95 EUR
500+4.68 EUR
1000+4.36 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ISC055N15NM6ATMA1 Hersteller : Infineon Technologies Infineon-ISC055N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190772508436ff9 ISC055N15NM6ATMA1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISC055N15NM6ATMA1 ISC055N15NM6ATMA1 Hersteller : Infineon Technologies Infineon-ISC055N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190772508436ff9 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH