auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.54 EUR |
| 10+ | 2.27 EUR |
| 100+ | 1.54 EUR |
| 500+ | 1.26 EUR |
| 1000+ | 1.14 EUR |
| 2500+ | 1.09 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details ISC056N08NM6ATMA1 Infineon Technologies
MOSFETs IFX FET > 60-80V.
Weitere Produktangebote ISC056N08NM6ATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| ISC056N08NM6ATMA1 | Hersteller : Infineon Technologies |
 N-channel MOSFET |
Produkt ist nicht verfügbar |
||
 |
ISC056N08NM6ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH 40<-<100V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 88A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 40A, 10V Power Dissipation (Max): 3W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 36µA Supplier Device Package: PG-TDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V |
Produkt ist nicht verfügbar |
|
|
|
ISC056N08NM6ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH 40<-<100V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 88A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 40A, 10V Power Dissipation (Max): 3W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 36µA Supplier Device Package: PG-TDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V |
Produkt ist nicht verfügbar |