ISC0602NLSATMA1 Infineon Technologies

Description: MOSFET N-CH 80V 14A/66A TDSON-8, Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PG-TDSON-8-6, Vgs(th) (Max) @ Id: 2.3V @ 29µA, Power Dissipation (Max): 2.5W (Ta), 60W (Tc).