ISC060N06NM6ATMA1 Infineon Technologies
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.21 EUR |
| 10+ | 0.78 EUR |
| 100+ | 0.64 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.59 EUR |
| 2500+ | 0.57 EUR |
| 5000+ | 0.55 EUR |
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Technische Details ISC060N06NM6ATMA1 Infineon Technologies
MOSFETs OptiMOS 6 Power Transistor, 60 V.
Weitere Produktangebote ISC060N06NM6ATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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ISC060N06NM6ATMA1 | Hersteller : Infineon Technologies |
 Description: TRENCH 40<-<100VPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 62A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V Power Dissipation (Max): 3W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 14µA Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V |
Produkt ist nicht verfügbar |
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ISC060N06NM6ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH 40<-<100V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 62A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V Power Dissipation (Max): 3W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 14µA Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V |
Produkt ist nicht verfügbar |