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ISC0702NLSATMA1

ISC0702NLSATMA1 Infineon Technologies

Infineon-ISC0702NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd752aa46df2 Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 23A/135A TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 135A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 38µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+1.09 EUR
Mindestbestellmenge: 5000
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Technische Details ISC0702NLSATMA1 Infineon Technologies

Description: MOSFET N-CH 60V 23A/135A TDSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 135A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V, Power Dissipation (Max): 3W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 38µA, Supplier Device Package: PG-TDSON-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V.

Weitere Produktangebote ISC0702NLSATMA1 nach Preis ab 1.09 EUR bis 2.52 EUR

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ISC0702NLSATMA1 ISC0702NLSATMA1 Hersteller : Infineon Technologies Infineon_ISC0702NLS_DataSheet_v02_00_EN-2581292.pdf MOSFET TRENCH 40<-<100V
auf Bestellung 196 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.5 EUR
10+ 2.08 EUR
100+ 1.65 EUR
500+ 1.38 EUR
1000+ 1.13 EUR
5000+ 1.09 EUR
Mindestbestellmenge: 2
ISC0702NLSATMA1 ISC0702NLSATMA1 Hersteller : Infineon Technologies Infineon-ISC0702NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd752aa46df2 Description: MOSFET N-CH 60V 23A/135A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 135A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 38µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
auf Bestellung 9305 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.52 EUR
10+ 2.09 EUR
100+ 1.66 EUR
500+ 1.41 EUR
1000+ 1.19 EUR
2000+ 1.13 EUR
Mindestbestellmenge: 7
ISC0702NLSATMA1 ISC0702NLSATMA1 Hersteller : Infineon Technologies isc0702nls.pdf Trans MOSFET N-CH 60V 23A 8-Pin TDSON EP T/R
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