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ISC0703NLSATMA1

ISC0703NLSATMA1 Infineon Technologies

Infineon-ISC0703NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd753b066df6
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 13A/57A TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 32A, 10V
Power Dissipation (Max): 3W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 15µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.62 EUR
10000+0.58 EUR
15000+0.56 EUR
25000+0.55 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details ISC0703NLSATMA1 Infineon Technologies

Description: MOSFET N-CH 60V 13A/57A TDSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 57A (Tc), Rds On (Max) @ Id, Vgs: 6.9mOhm @ 32A, 10V, Power Dissipation (Max): 3W (Ta), 44W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 15µA, Supplier Device Package: PG-TDSON-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V.

Weitere Produktangebote ISC0703NLSATMA1 nach Preis ab 0.67 EUR bis 2.46 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
ISC0703NLSATMA1 ISC0703NLSATMA1 Infineon Technologies Infineon_ISC0703NLS_DataSheet_v02_00_EN-2581289.pdf MOSFETs TRENCH 40<-<100V
auf Bestellung 7998 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.29 EUR
10+1.44 EUR
25+1.4 EUR
100+0.97 EUR
500+0.77 EUR
1000+0.68 EUR
2500+0.67 EUR
Mindestbestellmenge: 2 Stücke
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ISC0703NLSATMA1 ISC0703NLSATMA1 Infineon Technologies Infineon-ISC0703NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd753b066df6 Description: MOSFET N-CH 60V 13A/57A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 32A, 10V
Power Dissipation (Max): 3W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 15µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
auf Bestellung 33318 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.46 EUR
12+1.56 EUR
100+1.04 EUR
500+0.82 EUR
1000+0.74 EUR
2000+0.68 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ISC0703NLSATMA1 Infineon Technologies Infineon-ISC0703NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd753b066df6 N-канальний ПТ, Udss, В = 60, Id = 13, Опис N-канальний ПТ,... Транзистори Корпус: TDSON-8 Очікується: 1100 Од. вим: шт
Anzahl je Verpackung: 50 Stücke
verfügbar 10 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH
ISC0703NLSATMA1 Infineon_ISC0703NLS_DataSheet_v02_00_EN-2581289.pdf
ISC0703NLSATMA1
Hersteller: Infineon Technologies
MOSFETs TRENCH 40<-<100V
auf Bestellung 7998 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+2.29 EUR
10+1.44 EUR
25+1.4 EUR
100+0.97 EUR
500+0.77 EUR
1000+0.68 EUR
2500+0.67 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ISC0703NLSATMA1 Infineon-ISC0703NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd753b066df6
ISC0703NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 13A/57A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 32A, 10V
Power Dissipation (Max): 3W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 15µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
auf Bestellung 33318 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.46 EUR
12+1.56 EUR
100+1.04 EUR
500+0.82 EUR
1000+0.74 EUR
2000+0.68 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ISC0703NLSATMA1 Infineon-ISC0703NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd753b066df6
Hersteller: Infineon Technologies
N-канальний ПТ, Udss, В = 60, Id = 13, Опис N-канальний ПТ,... Транзистори Корпус: TDSON-8 Очікується: 1100 Од. вим: шт
Anzahl je Verpackung: 50 Stücke
verfügbar 10 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH